Chen Xingbi was born in Shanghai on January 28, 1931. His ancestral home is Pujiang, Zhejiang. After graduating from the Department of electrical engineering of Tongji University in 1952, he worked in Xiamen University, Southeast University and Chengdu Institute of Telecommunications Engineering (now University of Electronic Science and Technology). He was elected academician of the Chinese Academy of Sciences in 1999 and lifelong member of the International Association of electrical and electronic engineers in 2019.
Chen Xingbi is a leader and integrator in the field of power semiconductors in China. In his lifetime, he published more than 200 academic papers and obtained more than 40 patents from China, the United States and other countries. He is the first scientist in the world to put forward the super junction voltage withstand layer theory. His super junction invention patent breaks the traditional 'silicon limit', and is praised as a 'new milestone of high-voltage power devices' by the international academic community.
Chen Xingbi has won many honors such as National Technological Invention Award and scientific and technological progress award. In 2015, he won the highest honor 'international power semiconductor Pioneer Award' issued by IEEE ispsd (International Annual Conference on power semiconductor devices and integrated circuits), and became the first scientist in the Asia Pacific region to win this honor. In 2018, he was selected into the first IEEE ispsd Hall of fame and became the first Chinese scientist selected into the hall of fame.